november 2011 doc id 18472 rev 2 1/14 14 stl26NM60N n-channel 600 v, 0.160 , 19 a powerflat? 8x8 hv ultra low gate charge mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d stl26NM60N 650 v < 0.185 19 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0 o w e r & |